Search results for "Asymmetric hysteresi"
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Resistive switching in microscale anodic titanium dioxide-based memristors
2018
Licence CC BY-NC-ND The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R_OFF/R_ON ratio of 80 for the thickest oxide film devices.
Asymmetric hysteresis for probing Dzyalohsinskii-Moriya interaction
2016
The interfacial Dzyaloshinskii-Moriya interaction (DMI) is intimately related to the prospect of superior domain-wall dynamics and the formation of magnetic skyrmions. Although some experimental efforts have been recently proposed to quantify these interactions and the underlying physics, it is still far from trivial to address the interfacial DMI. Inspired by the reported tilt of the magnetization of the side edge of a thin film structure, we here present a quasi-static, straightforward measurement tool. By using laterally asymmetric triangular-shaped microstructures, it is demonstrated that interfacial DMI combined with an in-plane magnetic field yields a unique and significant shift in m…